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MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

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Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

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Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

NXP USA Inc.TO-226-3, TO-92-3 (TO-226AA) Formed LeadsRoHS

BST72A,112

Name: BST72A,112
Brand: NXP USA Inc.
SKU: BST72A,112

MOSFET N-CH 100V 190MA TO92-3

Parameters

Parameter	Value
Brand	NXP USA Inc.
Model	BST72A,112
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type	Through Hole
Operating Temperature	150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Rds On (Max)	10Ohm @ 150mA, 5V
Vgs(th) (Max)	3.5V @ 1mA
Input Capacitance (Ciss)	40 pF @ 10 V
Power Dissipation (Max)	830mW (Ta)
Drive Voltage	5V
Supplier Device Package	TO-92-3
RoHS	RoHS
Part Status	Obsolete

Application & Notes

BST72A,112 by NXP USA Inc. is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10Ohm @ 150mA, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.5V @ 1mA
Rds On (Max) @ Id, Vgs	10Ohm @ 150mA, 5V
Power Dissipation (Max)	830mW (Ta)
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	190mA (Ta)

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