BSS192PH6327FTSA1
MOSFET P-CH 250V 190MA SOT89
Transistors Fets Mosfets Single
TO-243AA
SIPMOS®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSS192PH6327FTSA1 |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 250 V |
| Rds On (Max) | 12Ohm @ 190mA, 10V |
| Vgs(th) (Max) | 2V @ 130µA |
| Gate Charge (Qg) | 6.1 nC @ 10 V |
| Input Capacitance (Ciss) | 104 pF @ 25 V |
| Power Dissipation (Max) | 1W (Ta) |
| Drive Voltage | 2.8V, 10V |
| Supplier Device Package | PG-SOT89 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSS192PH6327FTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-243AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12Ohm @ 190mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSS192PH6327FTSA1
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 190mA, 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 104 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) |
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