BSP61E6327HTSA1
TRANS PNP DARL 60V 1A SOT-223
Transistors Bipolar Bjt Single
TO-261-4, TO-261AA
Obsolete
$0.11 / unit (market reference)
MOQ: 2812 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSP61E6327HTSA1 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1.5 W |
| Supplier Device Package | PG-SOT223-4 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BSP61E6327HTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSP61E6327HTSA1
Alternatives & Replacements
View All →SBCP56-16T1G
TRANS NPN 80V 1A SOT223
MJE350STU-FS
POWER BIPOLAR TRANSISTOR
BCP6925H6327XTSA1
TRANS PNP 20V 1A SOT223
PBSS5240ZX
NOW NEXPERIA PBSS5240ZX - SMALL
BCP5416H6433XTMA1
TRANS NPN 45V 1A SOT223
BCP54H6327XTSA1
TRANS NPN 45V 1A SOT223
All Technical Specifications
| Power - Max | 1.5 W |
| Transistor Type | PNP - Darlington |
| Frequency - Transition | 200MHz |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
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