BSD840NH6327XTSA1
MOSFET 2N-CH 20V 0.88A SOT363
Transistors Fets Mosfets Arrays
6-VSSOP, SC-88, SOT-363
OptiMOS™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSD840NH6327XTSA1 |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 400mOhm @ 880mA, 2.5V |
| Vgs(th) (Max) | 750mV @ 1.6µA |
| Gate Charge (Qg) | 0.26nC @ 2.5V |
| Input Capacitance (Ciss) | 78pF @ 10V |
| Power Dissipation (Max) | 500mW |
| Supplier Device Package | PG-SOT363-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSD840NH6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 400mOhm @ 880mA, 2.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSD840NH6327XTSA1
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 500mW |
| Vgs(th) (Max) @ Id | 750mV @ 1.6µA |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 880mA, 2.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.26nC @ 2.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 78pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 880mA |
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