BSD314SPEH6327XTSA1
MOSFET P-CH 30V 1.5A SOT363-6
Transistors Fets Mosfets Single
6-VSSOP, SC-88, SOT-363
OptiMOS™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSD314SPEH6327XTSA1 |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 140mOhm @ 1.5A, 10V |
| Vgs(th) (Max) | 2V @ 6.3µA |
| Gate Charge (Qg) | 2.9 nC @ 10 V |
| Input Capacitance (Ciss) | 294 pF @ 15 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | PG-SOT363-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSD314SPEH6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 140mOhm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSD314SPEH6327XTSA1
Alternatives & Replacements
View All →BSD214SNH6327XTSA1
MOSFET N-CH 20V 1.5A SOT363-6
BSD316SNH6327XTSA1
MOSFET N-CH 30V 1.4A SOT363-6
BSD316SNL6327XT
MOSFET N-CH 30V 1.4A SOT363-6
BSV236SPH6327XTSA1
MOSFET P-CH 20V 1.5A SOT363-6
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 6.3µA |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.5A, 10V |
| Power Dissipation (Max) | 500mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 294 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
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