PC
Rochester Electronics, LLC8-PowerTDFNRoHS

BSC205N10LSG

N-CHANNEL POWER MOSFET

BSC205N10LSG by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerTDFN

Series

OptiMOS™

Status

Active

$0.45 / unit (market reference)

MOQ: 662 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelBSC205N10LSG
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)20.5mOhm @ 45A, 10V
Vgs(th) (Max)2.4V @ 43µA
Gate Charge (Qg)41 nC @ 10 V
Input Capacitance (Ciss)2900 pF @ 50 V
Power Dissipation (Max)76W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackagePG-TDSON-8-1
RoHSRoHS
Part StatusActive

Application & Notes

BSC205N10LSG by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20.5mOhm @ 45A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 43µA
Rds On (Max) @ Id, Vgs20.5mOhm @ 45A, 10V
Power Dissipation (Max)76W (Tc)
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds2900 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7.4A (Ta), 45A (Tc)

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