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NXP USA Inc.TO-226-3, TO-92-3 (TO-226AA) Formed LeadsRoHS

BS108/01,126

MOSFET N-CH 200V 300MA TO92-3

BS108/01,126 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Status

Obsolete

Datasheet

View Datasheet ↗

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelBS108/01,126
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)5Ohm @ 100mA, 2.8V
Vgs(th) (Max)1.8V @ 1mA
Input Capacitance (Ciss)120 pF @ 25 V
Power Dissipation (Max)1W (Ta)
Drive Voltage2.8V
Supplier Device PackageTO-92-3
RoHSRoHS
Part StatusObsolete

Application & Notes

BS108/01,126 by NXP USA Inc. is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5Ohm @ 100mA, 2.8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for BS108/01,126

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Alternatives & Replacements

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Rochester Electronics, LLCStockTO-226-3, TO-92-3 (TO-226AA) Formed Leads

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onsemiStockTO-226-3, TO-92-3 (TO-226AA) Formed Leads

FQN1N60CTA

MOSFET N-CH 600V 300MA TO92-3

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onsemiStockTO-226-3, TO-92-3 (TO-226AA) Formed Leads

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MOSFET N-CH 450V 500MA TO92-3

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NTE Electronics, IncStockTO-226-3, TO-92-3 (TO-226AA) Formed Leads

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.8V @ 1mA
Rds On (Max) @ Id, Vgs5Ohm @ 100mA, 2.8V
Power Dissipation (Max)1W (Ta)
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)2.8V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)

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