BGB 540 E6327
RF TRANS NPN 3.5V SOT343-4
Transistors Bipolar Bjt Rf
SC-82A, SOT-343
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BGB 540 E6327 |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 120mW |
| Supplier Device Package | PG-SOT343-4 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BGB 540 E6327 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-82A, SOT-343 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BGB 540 E6327
Alternatives & Replacements
View All →BGR405H6327XTSA1
RF TRANS NPN 5V SOT343-4
BFP182WH6327XTSA1
RF TRANS NPN 12V 8GHZ SOT343-4
BFP420H6740XTSA1
RF TRANS NPN 5V 25GHZ SOT343
BFP405H6740XTSA1
RF TRANS NPN 5V 25GHZ SOT343
BFP420E6327
RF TRANSISTOR, X BAND, NPN
2SC5013-T1-A
SMALL SIGNAL BIPOLAR TRANSISTOR
All Technical Specifications
| Gain | 16dB ~ 17.5dB |
| Power - Max | 120mW |
| Transistor Type | NPN |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
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