BFU660F,115
RF TRANS NPN 5.5V 21GHZ 4DFP
Transistors Bipolar Bjt Rf
SOT-343F
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | BFU660F,115 |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 225mW |
| Supplier Device Package | 4-DFP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BFU660F,115 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-343F package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BFU660F,115
Alternatives & Replacements
View All →MCH4016-TL-H
RF TRANS NPN 12V 10GHZ 4MCPH
NE662M04-T2-A
SAME AS 2SC5508 NPN SILICON AMPL
BFU730F,115
RF TRANS NPN 2.8V 55GHZ 4DFP
MCH4017-TL-H
RF TRANS NPN 12V 10GHZ 4MCPH
2SC5751-T2-A
SMALL SIGNAL BIPOLAR TRANSISTOR
BFU690F,115
RF TRANS NPN 5.5V 18GHZ 4DFP
All Technical Specifications
| Gain | 12dB ~ 21dB |
| Power - Max | 225mW |
| Transistor Type | NPN |
| Frequency - Transition | 21GHz |
| Noise Figure (dB Typ @ f) | 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz |
| Current - Collector (Ic) (Max) | 60mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 10mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 5.5V |
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