BFS481H6327XTSA1
RF TRANS 2 NPN 12V 8GHZ SOT363-6
Transistors Bipolar Bjt Rf
6-VSSOP, SC-88, SOT-363
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BFS481H6327XTSA1 |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 175mW |
| Supplier Device Package | P-SOT363-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BFS481H6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BFS481H6327XTSA1
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All Technical Specifications
| Gain | 20dB |
| Power - Max | 175mW |
| Transistor Type | 2 NPN (Dual) |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz |
| Current - Collector (Ic) (Max) | 20mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 8V |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
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