BFR843EL3E6327XTSA1
RF TRANS NPN 2.6V TSLP-3-10
Transistors Bipolar Bjt Rf
3-XFDFN
Active
Price available on request
MOQ: 15000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BFR843EL3E6327XTSA1 |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 125mW |
| Supplier Device Package | PG-TSLP-3-10 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BFR843EL3E6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BFR843EL3E6327XTSA1
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All Technical Specifications
| Gain | 25.5dB |
| Power - Max | 125mW |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 55mA |
| Voltage - Collector Emitter Breakdown (Max) | 2.6V |
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