BFR193L3E6327XTMA1
RF TRANS NPN 12V 8GHZ TSLP-3-1
Transistors Bipolar Bjt Rf
SC-101, SOT-883
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BFR193L3E6327XTMA1 |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 580mW |
| Supplier Device Package | PG-TSLP-3-1 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BFR193L3E6327XTMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-101, SOT-883 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BFR193L3E6327XTMA1
Alternatives & Replacements
View All →BFR340L3E6327XTMA1
RF TRANS NPN 9V 14GHZ TSLP-3-1
BFR750L3RHE6327
RF BIPOLAR TRANSISTOR
BFR360L3E6765XTMA1
RF TRANS NPN 9V 14GHZ TSLP-3-1
BFR740L3RHE6327XTSA1
RF TRANS NPN 4.7V 42GHZ TSLP-3
BFR460L3E6327XTMA1
RF TRANS NPN 5.8V 22GHZ TSLP-3-1
BFR949L3E6327
RF BIPOLAR TRANSISTOR
All Technical Specifications
| Gain | 12.5dB ~ 19dB |
| Power - Max | 580mW |
| Transistor Type | NPN |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz |
| Current - Collector (Ic) (Max) | 80mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 30mA, 8V |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.