BFQ591,115
RF TRANS NPN 15V 7GHZ SOT89-3
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Transistors Bipolar Bjt Rf
TO-243AA
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | BFQ591,115 |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Power Dissipation (Max) | 2.25W |
| Supplier Device Package | SOT-89-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BFQ591,115 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-243AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BFQ591,115
Alternatives & Replacements
View All →2SC4703-T1-AZ
RF 0.15A, ULTRA HIGH FREQ BAND
NE85634-T1-RE-A
RF TRANS NPN 12V 6.5GHZ SOT89
BFQ790H6327XTSA1
RF TRANS NPN 6.1V 1.85GHZ SOT89
NESG270034-T1-AZ
NPN SILICON MEDIUM POWER TRANSIS
NE856M02-T1-AZ
SAME AS 2SC5336 NPN SILICON AMPL
MT3S113P(TE12L,F)
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
All Technical Specifications
| Power - Max | 2.25W |
| Transistor Type | NPN |
| Frequency - Transition | 7GHz |
| Current - Collector (Ic) (Max) | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 70mA, 8V |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
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