BCV26E6327
BIPOLAR DIGITAL TRANSISTOR
Transistors Bipolar Bjt Single
TO-236-3, SC-59, SOT-23-3
Active
Price available on request
MOQ: 8172 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BCV26E6327 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 360 mW |
| Supplier Device Package | PG-SOT23-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BCV26E6327 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BCV26E6327
Alternatives & Replacements
View All →BC847BLT1G
TRANS NPN 45V 100MA SOT23-3
2SC2812N6-CPA-TB-E
TRANS NPN 50V 0.15A CP
MMBT5401
Transistor SOT-23 PNP 160V0.6A
BC859B,215
NEXPERIA BC859B - SMALL SIGNAL B
2SA1179N6-CPA-TB-E
TRANS PNP 50V 0.15A CP
BC847C
TRANS NPN 45V 100A SOT23-3
All Technical Specifications
| Power - Max | 360 mW |
| Transistor Type | PNP - Darlington |
| Frequency - Transition | 200MHz |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
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