BCR 162L3 E6327
TRANS PREBIAS PNP 250MW TSLP-3
Transistors Bipolar Bjt Single Pre Biased
SC-101, SOT-883
Discontinued at Digi-Key
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BCR 162L3 E6327 |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 250 mW |
| Supplier Device Package | PG-TSLP-3-4 |
| RoHS | RoHS |
| Part Status | Discontinued at Digi-Key |
Application & Notes
BCR 162L3 E6327 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-101, SOT-883 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BCR 162L3 E6327
Alternatives & Replacements
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TRANS PREBIAS NPN 50V DFN1006-3
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PDTC115E - NPN RESISTOR-EQUIPPED
PDTA124XMB,315
NOW NEXPERIA PDTA124XMB - SMALL
PDTC124XMB,315
SMALL SIGNAL BIPOLAR TRANSISTOR,
PDTC144WM,315
PDTC144W - UPN RESISTOR-EQUIPPED
PDTC124TM,315
TRANS PREBIAS NPN 50V DFN1006-3
All Technical Specifications
| Power - Max | 250 mW |
| Transistor Type | PNP - Pre-Biased |
| Resistor - Base (R1) | 4.7 kOhms |
| Frequency - Transition | 200 MHz |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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