BCP49H6359XTMA1
TRANS NPN DARL 60V 0.5A SOT223
Transistors Bipolar Bjt Single
TO-261-4, TO-261AA
Last Time Buy
Price available on request
MOQ: 15000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BCP49H6359XTMA1 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1.5 W |
| Supplier Device Package | PG-SOT223-4 |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
BCP49H6359XTMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BCP49H6359XTMA1
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All Technical Specifications
| Power - Max | 1.5 W |
| Transistor Type | NPN - Darlington |
| Frequency - Transition | 200MHz |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
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