APTM20AM04FG
MOSFET 2N-CH 200V 372A SP6
Transistors Fets Mosfets Arrays
SP6
Active
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APTM20AM04FG |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) | 5mOhm @ 186A, 10V |
| Vgs(th) (Max) | 5V @ 10mA |
| Gate Charge (Qg) | 560nC @ 10V |
| Input Capacitance (Ciss) | 28900pF @ 25V |
| Power Dissipation (Max) | 1250W |
| Supplier Device Package | SP6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
APTM20AM04FG by Microchip Technology is an N-channel power MOSFET rated at 200V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SP6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5mOhm @ 186A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APTM20AM04FG
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Power - Max | 1250W |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 186A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 560nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance (Ciss) (Max) @ Vds | 28900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 372A |
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