Microchip TechnologySP4RoHS
APTM100H45STG
MOSFET 4N-CH 1000V 18A SP4
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
SP4
Status
Active
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APTM100H45STG |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 4 N-Channel (H-Bridge) |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Rds On (Max) | 540mOhm @ 9A, 10V |
| Vgs(th) (Max) | 5V @ 2.5mA |
| Gate Charge (Qg) | 154nC @ 10V |
| Input Capacitance (Ciss) | 4350pF @ 25V |
| Power Dissipation (Max) | 357W |
| Supplier Device Package | SP4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
APTM100H45STG by Microchip Technology is an N-channel power MOSFET rated at 1000V (1kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SP4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 540mOhm @ 9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APTM100H45STG
Alternatives & Replacements
View All →All Technical Specifications
| FET Type | 4 N-Channel (H-Bridge) |
| FET Feature | Standard |
| Power - Max | 357W |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 154nC @ 10V |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 4350pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 18A |
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