APT36GA60BD15
IGBT 600V 65A 290W TO-247
Transistors Igbts Single
TO-247-3
POWER MOS 8™
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APT36GA60BD15 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 290 W |
| Supplier Device Package | TO-247 [B] |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
APT36GA60BD15 by Microchip Technology is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APT36GA60BD15
Alternatives & Replacements
View All →IRG7PH35UD1-EP
IGBT W/ULTRA-LOW VF DIODE FOR IN
NGTB40N60IHLWG
IGBT 600V 40A TO247
NGTB20N120IHWG
IGBT 20A 1200V TO-247
IRG7PH35UD1MPBF
IGBT W/ULTRA-LOW VF DIODE FOR IN
IRGP4263DPBF
IGBT W/ULTRAFAST SOFT RECOVERY D
FGH20N6S2D
N-CHANNEL IGBT
All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 18 nC |
| Power - Max | 290 W |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Switching Energy | 307µJ (on), 254µJ (off) |
| Td (on/off) @ 25°C | 16ns/122ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Current - Collector (Ic) (Max) | 65 A |
| Current - Collector Pulsed (Icm) | 109 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.