APT35GA90BD15
IGBT 900V 63A 290W TO247
Transistors Igbts Single
TO-247-3
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APT35GA90BD15 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 290 W |
| Supplier Device Package | TO-247 [B] |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
APT35GA90BD15 by Microchip Technology is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APT35GA90BD15
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All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 84 nC |
| Power - Max | 290 W |
| Test Condition | 600V, 18A, 10Ohm, 15V |
| Switching Energy | 642µJ (on), 382µJ (off) |
| Td (on/off) @ 25°C | 12ns/104ns |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 18A |
| Current - Collector (Ic) (Max) | 63 A |
| Current - Collector Pulsed (Icm) | 105 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
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