APT27ZTR-G1
TRANS NPN 450V 0.8A TO92
Transistors Bipolar Bjt Single
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | APT27ZTR-G1 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 800 mW |
| Supplier Device Package | TO-92 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
APT27ZTR-G1 by Diodes Incorporated is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APT27ZTR-G1
Alternatives & Replacements
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KSA992FBTA - PNP EPITAXIAL SILIC
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SMALL SIGNAL BIPOLAR TRANSISTOR,
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BC556CTA
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BC33716TA
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KSA709YTA
TRANS PNP 150V 700MA TO92-3
All Technical Specifications
| Power - Max | 800 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 40mA, 200mA |
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 100mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
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