APT27GA90BD15
IGBT 900V 48A 223W TO247
Transistors Igbts Single
TO-247-3
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APT27GA90BD15 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 223 W |
| Supplier Device Package | TO-247 [B] |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
APT27GA90BD15 by Microchip Technology is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for APT27GA90BD15
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All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 62 nC |
| Power - Max | 223 W |
| Test Condition | 600V, 14A, 10Ohm, 15V |
| Switching Energy | 413µJ (on), 287µJ (off) |
| Td (on/off) @ 25°C | 9ns/98ns |
| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 14A |
| Current - Collector (Ic) (Max) | 48 A |
| Current - Collector Pulsed (Icm) | 79 A |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
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