AOW29S50
MOSFET N-CH 500V 29A TO262
Transistors Fets Mosfets Single
TO-262-3 Long Leads, I²Pak, TO-262AA
aMOS™
Not For New Designs
Price available on request
MOQ: 1000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Alpha & Omega Semiconductor Inc. |
| Model | AOW29S50 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Rds On (Max) | 150mOhm @ 14.5A, 10V |
| Vgs(th) (Max) | 3.9V @ 250µA |
| Gate Charge (Qg) | 26.6 nC @ 10 V |
| Input Capacitance (Ciss) | 1312 pF @ 100 V |
| Power Dissipation (Max) | 357W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-262 |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
AOW29S50 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 150mOhm @ 14.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for AOW29S50
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 14.5A, 10V |
| Power Dissipation (Max) | 357W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 26.6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1312 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
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