A3G26H350W17SR3
AIRFAST RF POWER GAN TRANSISTOR,
Transistors Fets Mosfets Rf
NI-780S-4S2S
Active
Price available on request
MOQ: 250 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | A3G26H350W17SR3 |
| Package / Case | NI-780S-4S2S |
| Supplier Device Package | NI-780S-4S2S |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
A3G26H350W17SR3 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The NI-780S-4S2S package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for A3G26H350W17SR3
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All Technical Specifications
| Gain | 13.3dB |
| Frequency | 2.496GHz ~ 2.69GHz |
| Current - Test | 250 mA |
| Power - Output | 59W |
| Voltage - Test | 48 V |
| Voltage - Rated | 125 V |
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