A2T27S007NT1
AIRFAST RF POWER LDMOS TRANSISTO
Transistors Fets Mosfets Rf
16-VDFN Exposed Pad
Obsolete
Price available on request
MOQ: 27 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | A2T27S007NT1 |
| Package / Case | 16-VDFN Exposed Pad |
| Supplier Device Package | 16-DFN (4x6) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
A2T27S007NT1 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 16-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for A2T27S007NT1
Alternatives & Replacements
View All →AFM906NT1
RF MOSFET LDMOS 10.8V 16DFN
AFM907NT1
RF MOSFET LDMOS 7.5V 10-DFN
BLP8G27-10Z
RF FET LDMOS 65V 17DB 16VDFN
BLP8G27-5Z
RF FET LDMOS 65V 18DB 16VDFN
BLP27M810Z
RF FET LDMOS 65V 17DB 16VDFN
All Technical Specifications
| Frequency | 728MHz ~ 3.6GHz |
| Power - Output | 28.8dBm |
| Transistor Type | LDMOS |
| Voltage - Rated | 28 V |
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