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NXP USA Inc.OM-1230-4L2LRoHS

A2T21H360-23NR6

RF TRANS 2.1GHZ 360W OM1230-4L2S

Subcategory

Transistors Fets Mosfets Rf

Package

OM-1230-4L2L

Status

Last Time Buy

Price available on request

MOQ: 5 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelA2T21H360-23NR6
Package / CaseOM-1230-4L2L
Supplier Device PackageOM-1230-4L2L
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

A2T21H360-23NR6 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The OM-1230-4L2L package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Gain16.8dB
Frequency2.11GHz ~ 2.2GHz
Current - Test500 mA
Power - Output373W
Voltage - Test28 V
Transistor TypeLDMOS (Dual)
Voltage - Rated65 V
Current Rating (Amps)10µA

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