What is the minimum order quantity for 2SK4150TZ-E?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

How long does shipping take for 2SK4150TZ-E?

Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

Are your electronic components genuine and authentic?

Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for 2SK4150TZ-E?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for 2SK4150TZ-E?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Renesas Electronics America IncTO-226-3, TO-92-3 (TO-226AA) Formed LeadsRoHS

2SK4150TZ-E

Name: 2SK4150TZ-E
Brand: Renesas Electronics America Inc
SKU: 2SK4150TZ-E

MOSFET N-CH 250V 400MA TO92

2SK4150TZ-E by Renesas Electronics America Inc

Parameters

Parameter	Value
Brand	Renesas Electronics America Inc
Model	2SK4150TZ-E
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type	Through Hole
Operating Temperature	150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	250 V
Rds On (Max)	5.7Ohm @ 200mA, 4V
Gate Charge (Qg)	3.7 nC @ 4 V
Input Capacitance (Ciss)	80 pF @ 25 V
Power Dissipation (Max)	750mW (Ta)
Drive Voltage	2.5V, 4V
Supplier Device Package	TO-92
RoHS	RoHS
Part Status	Obsolete

Application & Notes

2SK4150TZ-E by Renesas Electronics America Inc is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.7Ohm @ 200mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs	5.7Ohm @ 200mA, 4V
Power Dissipation (Max)	750mW (Ta)
Gate Charge (Qg) (Max) @ Vgs	3.7 nC @ 4 V
Drain to Source Voltage (Vdss)	250 V
Input Capacitance (Ciss) (Max) @ Vds	80 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)

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