2SK3906(Q)
MOSFET N-CH 600V 20A TO3P
Transistors Fets Mosfets Single
TO-3P-3, SC-65-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SK3906(Q) |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 330mOhm @ 10A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 60 nC @ 10 V |
| Input Capacitance (Ciss) | 4250 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-3P(N) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SK3906(Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 330mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SK3906(Q)
Alternatives & Replacements
View All →FQA8N80
N-CHANNEL POWER MOSFET
FDA20N50
MOSFET N-CH 500V 22A TO3PN
RJK60S5DPK-M0#T0
MOSFET N-CH 600V 20A TO3PSG
IRFP460C
MOSFET N-CH 500V 20A TO3P
FQA10N80
MOSFET N-CH 800V 9.8A TO3P
FQA10N60C
MOSFET N-CH 600V 10A TO3P
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 10A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4250 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
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