2SK2883(TE24L,Q)
MOSFET N-CH 800V 3A TO220SM
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SK2883(TE24L,Q) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 800 V |
| Rds On (Max) | 3.6Ohm @ 1.5A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 25 nC @ 10 V |
| Input Capacitance (Ciss) | 750 pF @ 25 V |
| Power Dissipation (Max) | 75W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-220SM |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SK2883(TE24L,Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 800 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.6Ohm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SK2883(TE24L,Q)
Alternatives & Replacements
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MOSFET N-CH 25V 10A/32A DPAK
FDD8451
POWER FIELD-EFFECT TRANSISTOR, 9
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.5A, 10V |
| Power Dissipation (Max) | 75W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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