2SK2035(T5L,F,T)
MOSFET N-CH 20V 100MA SSM
Transistors Fets Mosfets Single
SC-75, SOT-416
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SK2035(T5L,F,T) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 12Ohm @ 10mA, 2.5V |
| Input Capacitance (Ciss) | 8.5 pF @ 3 V |
| Power Dissipation (Max) | 100mW (Ta) |
| Drive Voltage | 2.5V |
| Supplier Device Package | SSM |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SK2035(T5L,F,T) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-75, SOT-416 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12Ohm @ 10mA, 2.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SK2035(T5L,F,T)
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | 10V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 10mA, 2.5V |
| Power Dissipation (Max) | 100mW (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8.5 pF @ 3 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
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