PartsCube Global

Toshiba Semiconductor and StorageTO-251-3 Stub Leads, IPakRoHS

2SJ681(Q)

MOSFET P-CH 60V 5A PW-MOLD2

2SJ681(Q) by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Stub Leads, IPak

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
Model2SJ681(Q)
Package / CaseTO-251-3 Stub Leads, IPak
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)170mOhm @ 2.5A, 10V
Vgs(th) (Max)2V @ 1mA
Gate Charge (Qg)15 nC @ 10 V
Input Capacitance (Ciss)700 pF @ 10 V
Power Dissipation (Max)20W (Ta)
Drive Voltage4V, 10V
Supplier Device PackagePW-MOLD2
RoHSRoHS
Part StatusObsolete

Application & Notes

2SJ681(Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Stub Leads, IPak package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 170mOhm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs170mOhm @ 2.5A, 10V
Power Dissipation (Max)20W (Ta)
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C5A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.