2SJ681(Q)
MOSFET P-CH 60V 5A PW-MOLD2

Transistors Fets Mosfets Single
TO-251-3 Stub Leads, IPak
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SJ681(Q) |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 170mOhm @ 2.5A, 10V |
| Vgs(th) (Max) | 2V @ 1mA |
| Gate Charge (Qg) | 15 nC @ 10 V |
| Input Capacitance (Ciss) | 700 pF @ 10 V |
| Power Dissipation (Max) | 20W (Ta) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | PW-MOLD2 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SJ681(Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Stub Leads, IPak package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 170mOhm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SJ681(Q)
Alternatives & Replacements
View All →NTD4906N-35G
MOSFET N-CH 30V 10.3A/54A IPAK
NTD65N03R-35G
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IPS70R1K4CEAKMA1
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NTD78N03-35G
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FDU6682
N-CHANNEL POWER MOSFET
NTD4863N-35G
MOSFET N-CH 25V 9.2A/49A IPAK
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 2.5A, 10V |
| Power Dissipation (Max) | 20W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
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