2SJ610(TE16L1,NQ)
MOSFET P-CH 250V 2A PW-MOLD
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SJ610(TE16L1,NQ) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 250 V |
| Rds On (Max) | 2.55Ohm @ 1A, 10V |
| Vgs(th) (Max) | 3.5V @ 1mA |
| Gate Charge (Qg) | 24 nC @ 10 V |
| Input Capacitance (Ciss) | 381 pF @ 10 V |
| Power Dissipation (Max) | 20W (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | PW-MOLD |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SJ610(TE16L1,NQ) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.55Ohm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SJ610(TE16L1,NQ)
Alternatives & Replacements
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MOSFET N-CH 25V 10A/32A DPAK
FDD8451
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 2.55Ohm @ 1A, 10V |
| Power Dissipation (Max) | 20W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 381 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
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