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Toshiba Semiconductor and StorageTO-243AARoHS

2SJ360(F)

MOSFET P-CH 60V 1A PW-MINI

2SJ360(F) by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

TO-243AA

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
Model2SJ360(F)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)730mOhm @ 500mA, 10V
Vgs(th) (Max)2V @ 1mA
Gate Charge (Qg)6.5 nC @ 10 V
Input Capacitance (Ciss)155 pF @ 10 V
Power Dissipation (Max)500mW (Ta)
Drive Voltage4V, 10V
Supplier Device PackagePW-MINI
RoHSRoHS
Part StatusObsolete

Application & Notes

2SJ360(F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-243AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 730mOhm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs730mOhm @ 500mA, 10V
Power Dissipation (Max)500mW (Ta)
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds155 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C1A (Ta)

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