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Toshiba Semiconductor and StorageTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

2SD1223(TE16L1,NQ)

TRANS NPN DARL 80V 4A PW MOLD

2SD1223(TE16L1,NQ) by Toshiba Semiconductor and Storage
Subcategory

Transistors Bipolar Bjt Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Active

Price available on request

MOQ: 2000 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
Model2SD1223(TE16L1,NQ)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
Power Dissipation (Max)1 W
Supplier Device PackagePW-MOLD
RoHSRoHS
Part StatusActive

Application & Notes

2SD1223(TE16L1,NQ) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max1 W
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 6mA, 3A
Current - Collector (Ic) (Max)4 A
Current - Collector Cutoff (Max)20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 2V
Voltage - Collector Emitter Breakdown (Max)80 V

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