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Rochester Electronics, LLCTO-236-3, SC-59, SOT-23-3RoHS

2SC3143-5-TB-E

TRANSISTOR

Subcategory

Transistors Bipolar Bjt Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

Price available on request

MOQ: 2219 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
Model2SC3143-5-TB-E
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature125°C (TJ)
Power Dissipation (Max)200 mW
Supplier Device Package3-CP
RoHSRoHS
Part StatusActive

Application & Notes

2SC3143-5-TB-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max200 mW
Transistor TypeNPN
Frequency - Transition150MHz
Vce Saturation (Max) @ Ib, Ic700mV @ 3mA, 30mA
Current - Collector (Ic) (Max)80 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)160 V

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