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NXP USA Inc.TO-236-3, SC-59, SOT-23-3RoHS

2N7002T,215

MOSFET N-CH 60V 300MA TO236AB

2N7002T,215 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
Model2N7002T,215
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)5Ohm @ 500mA, 10V
Vgs(th) (Max)2.5V @ 1mA
Input Capacitance (Ciss)40 pF @ 10 V
Power Dissipation (Max)830mW (Ta)
Drive Voltage5V, 10V
Supplier Device PackageSOT-23 (TO-236AB)
RoHSRoHS
Part StatusObsolete

Application & Notes

2N7002T,215 by NXP USA Inc. is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
Power Dissipation (Max)830mW (Ta)
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds40 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)

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