GeneSiC SemiconductorTO-257-3RoHS
1N8032-GA
DIODE SCHOTTKY 650V 2.5A TO257
Category
Subcategory
Diodes Rectifiers Single
Package
TO-257-3
Status
Obsolete
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | 1N8032-GA |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-257 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
1N8032-GA by GeneSiC Semiconductor is a commonly used electronic component in the Diodes Rectifiers Single category. Available in TO-257-3 package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.
📖 Technical Guides for 1N8032-GA
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All Technical Specifications
| Speed | No Recovery Time > 500mA (Io) |
| Diode Type | Silicon Carbide Schottky |
| Capacitance @ Vr, F | 274pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 2.5A |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 2.5 A |
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