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Microchip TechnologyE-MELFRoHS

1N5417US

DIODE GEN PURP 200V 3A D5B

1N5417US by Microchip Technology
Subcategory

Diodes Rectifiers Single

Package

E-MELF

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandMicrochip Technology
Model1N5417US
Package / CaseE-MELF
Mounting TypeSurface Mount
Supplier Device PackageD-5B
RoHSRoHS
Part StatusActive

Application & Notes

1N5417US by Microchip Technology is a commonly used electronic component in the Diodes Rectifiers Single category. Available in E-MELF package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.

All Technical Specifications

SpeedFast Recovery =< 500ns, > 200mA (Io)
Diode TypeStandard
Reverse Recovery Time (trr)150 ns
Current - Reverse Leakage @ Vr1 µA @ 200 V
Voltage - DC Reverse (Vr) (Max)200 V
Current - Average Rectified (Io)3A
Operating Temperature - Junction-65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If1.5 V @ 9 A

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